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APT10035B2FLLG Datasheet
Datasheet specifications
| Datasheet's name | APT10035(B2,L)FLL(G) |
|---|---|
| File size | 185.884 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet APT10035(B2,L)FLL(G) |
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Other documentations
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Technical specifications
- Manufacturer: Microchip Technology
- Series: POWER MOS 7®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
- detail: N-Channel 1000V 28A (Tc) 690W (Tc) Through Hole T-MAX™ [B2]